HIT1213 Datasheet, PDF(2/5 Page) Renesas Technology Corp

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HIT1213 Datasheet, PDF (2/5 Pages) Renesas Technology Corp – Silicon NPN Epitaxial

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Electrical Characteristics

(Ta = 25Â°C)

Item

Symbol Min. Typ Max. Unit

Test Conditions

Collector to base breakdown voltage

V(BR)CBO

V IC = 10 ÂµA, IE = 0

Collector to emitter breakdown voltage V(BR)CEO

V IC = 0.1 mA, RBE = â

Emitter to base breakdown voltage

V(BR)EBO

V IE = 10 ÂµA, IC = 0

Collector cutoff current

ICBO

500

nA VCB = 50 V, IE = 0

Emitter cutoff current

IEBO

500

nA VEB = 5 V

DC current transfer ratio

hFE1

320

â VCE = 3 V, IC = 10 mA

Collector to emitter saturation voltage

VCE(sat)

0.6

V IC = 150 mA, IB = 15 mA

Base to emitter voltage

VBE(on)

1.2

V VCE = 3 V, IC = 10 mA

REJ03G1609-0100 Rev.1.00 Nov 28, 2007

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