HAT2276R Datasheet, PDF (2/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOSFET

HAT2276R
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 5. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
30
—
—
1.0
—
—
7.8
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
21
26
13
630
155
57
4.6
2.2
1.2
7
14
36
3.4
0.85
17
Max
—
±0.1
1
2.5
26
37
—
—
—
—
—
—
—
—
—
—
—
1.11
—
Unit
V
A
A
V
m
m
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 3.75 A, VGS = 10 V ^Note5
ID = 3.75 A, VGS = 4.5 V ^Note5
ID = 3.75 A, VDS = 10 V ^Note5
VDS = 10 V, VGS = 0,
f = 1MHz
VDD = 10 V, VGS = 4.5 V,
ID = 7.5 A
VGS =10 V, ID = 3.75 A,
VDD  10 V, RL = 2.66 ,
Rg = 4.7 
IF = 7.5 A, VGS = 0 ^Note5
IF = 7.5 A, VGS = 0
diF/ dt = 100 A/ µs
R07DS1371EJ0301 Rev.3.01
Jan 20, 2017
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