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HAT2202C Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching
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HAT2202C
Electrical Characteristics
Item
Symbol Min
Drain to Source breakdown voltage V(BR)DSS
20
Gate to Source breakdown voltage V(BR)GSS ±12
Gate to Source leakage current
IGSS
—
Drain to Source leakage current
IDSS
—
Gate to Source cutoff voltage
VGS(th)
0.4
Drain to Source on state resistance RDS(on)
—
RDS(on)
—
Forward transfer admittance
|yfs|
6.5
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Total gate charge
Qg
—
Gate to Source charge
Qgs
—
Gate to Drain charge
Qgd
—
Turn - on delay time
td(on)
—
Rise time
tr
—
Turn - off delay time
td(off)
—
Fall time
tf
—
Body - Drain diode forward voltage
VDF
—
Notes: 3. Pulse test
Typ Max
—
—
—
—
—
±10
—
1
—
1.4
31
40
43
55
9.5
—
520
—
115
—
60
—
6
—
1
—
1.4
—
9
—
8
—
28
—
6
—
0.8
1.1
Unit
V
V
μA
μA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 μA, VDS = 0
VGS = ± 10V, VDS = 0
VDS = 20 V, VGS = 0
ID = 10 V, ID = 1 mA
ID = 1.5 A, VGS =4.5 V Note3
ID = 1.5 A, VGS = 2.5 V Note3
ID = 1.5 A, VDS = 10 V Note3
VDS = 10 V, VGS = 0,
f = 1 MHz
VDD = 10 V, VGS = 4.5 V,
ID = 3 A
ID = 1.5 A,
VGS = 10 V, VDD =10 V,
RL= 6.7 Ω, Rg = 4.7 Ω
IF = 3 A, VGS = 0 Note3
R07DS1179EJ0700 Rev.7.00
Mar 19, 2014
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