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HAT2200WP Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching | |||
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HAT2200WP
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS 100
Gate to source leak current
IGSS
â
Zero gate voltage drain current
IDSS
â
Gate to source cutoff voltage
VGS(off)
3.5
Static drain to source on state
RDS(on)
â
resistance
RDS(on)
â
Forward transfer admittance
|yfs|
19
Input capacitance
Ciss
â
Output capacitance
Coss
â
Reverse transfer capacitance
Crss
â
Gate resistance
Rg
â
Total gate charge
Qg
â
Gate to source charge
Qgs
â
Gate to drain charge
Qgd
â
Turn-on delay time
td(on)
â
Rise time
tr
â
Turn-off delay time
td(off)
â
Fall time
tf
â
Bodyâdrain diode forward voltage
VDF
â
Bodyâdrain diode reverse recovery
trr
â
time
Notes: 4. Pulse test
Typ
â
â
â
â
22
23
33
2300
280
90
1.3
32
12
8
16
9.5
31
4.6
0.82
50
Max
â
±0.1
1
5.0
28
33
â
â
â
â
â
â
â
â
â
â
â
â
1.07
â
Unit
V
µA
µA
V
mâ¦
mâ¦
S
pF
pF
pF
â¦
nc
nc
nc
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 100 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 10 A, VGS = 10 V Note4
ID = 10 A, VGS = 8 V Note4
ID = 10 A, VDS = 10 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 50 V
VGS = 10 V
ID = 20 A
VGS = 10 V, ID = 10 A
VDD â
30 V
RL = 3 â¦
Rg = 4.7 â¦
IF = 20 A, VGS = 0 Note4
IF = 20 A, VGS = 0
diF/ dt = 100 A/ µs
REJ03G1678-0300 Rev.3.00 May 27, 2008
Page 2 of 7
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