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HAT2189WP Datasheet, PDF (2/4 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching | |||
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HAT2189WP
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage
V(BR)DSS
200
Zero gate voltage drain current
IDSS
â
Gate to source leak current
IGSS
â
Gate to source cutoff voltage
VGS(off)
3.0
Forward transfer admittance
|yfs|
3.5
Static drain to source on state
resistance
RDS(on)
â
Input capacitance
Ciss
â
Output capacitance
Coss
â
Reverse transfer capacitance
Crss
â
Turn-on delay time
td(on)
â
Rise time
tr
â
Turn-off delay time
td(off)
â
Fall time
tf
â
Total gate charge
Qg
â
Gate to source charge
Qgs
â
Gate to drain charge
Qgd
â
Body-drain diode forward voltage
VDF
â
Body-drain diode reverse recovery time
trr
â
Notes: 4. Pulse test
Typ
â
â
â
â
6.0
0.23
430
86
7
24
24
44
9
10
2.7
3.8
0.9
100
Max
â
1
±0.1
4.5
â
0.27
Unit
V
µA
µA
V
S
â¦
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
VDS = 200 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 4.3 A, VDS = 10 V Note4
ID = 4.3 A, VGS = 10 V Note4
â
pF VDS = 25 V
â
pF VGS = 0
â
pF f = 1 MHz
â
ns ID = 4.3 A
â
ns VGS = 10 V
â
ns RL = 23.3 â¦
â
ns Rg = 10 â¦
â
nC VDD = 160 V
â
nC VGS = 10 V
â
nC ID = 8.5 A
1.4
V IF = 8.5 A, VGS = 0 Note4
â
ns IF = 8.5 A, VGS = 0
diF/dt = 100 A/µs
Rev.1.00, Aug.24.2005, page 2 of 3
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