HAT2188WP Datasheet, PDF (2/4 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2188WP
Electrical Characteristics
Item
Symbol Min
Drain to Source breakdown voltage
V_(BR)DSS
200
Zero Gate voltage Drain current
I_DSS
—
Gate to Source leak current
I_GSS
—
Gate to Source cutoff voltage
V_GS(off)
3.0
Forward transfer admittance
|yfs|
5
Static Drain to Source on state
resistance
R_DS(on)
—
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Total Gate charge
Qg
—
Gate to Source charge
Qgs
—
Gate to Drain charge
Qgd
—
Body-Drain diode forward voltage
V_DF
—
Body-Drain diode reverse recovery time
trr
—
Notes: 4. Pulse test
Typ
—
—
—
—
9
0.135
Max
—
1
±0.1
4.5
—
0.157
Unit
V
µA
µA
V
S
Ω
(Ta = 25°C)
Test conditions
I_D = 10 mA, V_GS = 0
V_DS = 200 V, V_GS = 0
V_GS = ±30 V, V_DS = 0
V_DS = 10 V, I_D = 1 mA
I_D = 6 A, V_DS = 10 V ^Note4
I_D = 6 A, V_GS = 10 V^Note4
710
140
11
26
27
54
7
15
4
6
0.85
110
—
pF V_DS = 25 V
—
pF ^VGS ^{= 0}
—
pF ^{f = 1 MHz}
—
ns I_D = 6 A
—
ns ^VGS ^{= 10 V}
—
ns ^{RL = 16.7 Ω}
—
ns ^{Rg = 10 Ω}
—
nC V_DD = 160 V
—
nC ^VGS ^{= 10 V}
—
nC ^{ID = 12 A}
1.4
V I_F = 12 A, V_GS = 0 ^Note4
—
ns I_F = 12 A, V_GS = 0
diF/dt = 100 A/µs
Rev.5.00, Mar.24.2005, page 2 of 3