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HAT2169H Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching | |||
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HAT2169H
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS 40
Gate to source breakdown voltage V(BR)GSS ±20
Gate to source leak current
IGSS
â
Zero gate voltage drain current
IDSS
â
Gate to source cutoff voltage
VGS(off)
1.0
Static drain to source on state
resistance
RDS(on)
â
RDS(on)
â
Forward transfer admittance
|yfs|
39
Input capacitance
Ciss
â
Output capacitance
Coss
â
Reverse transfer capacitance
Crss
â
Gate Resistance
Rg
â
Total gate charge
Qg
â
Gate to source charge
Qgs
â
Gate to drain charge
Qgd
â
Turn-on delay time
td(on)
â
Rise time
tr
â
Turn-off delay time
td(off)
â
Fall time
tf
â
Bodyâdrain diode forward voltage
VDF
â
Bodyâdrain diode reverse recovery
trr
â
time
Notes: 4. Pulse test
Typ
â
â
â
â
â
2.8
4.0
65
6650
890
360
0.5
45
21
10
15
64
55
9.5
0.83
40
Max
â
â
±10
1
2.5
3.5
6.0
â
â
â
â
â
â
â
â
â
â
â
â
1.08
â
Unit
V
V
µA
µA
V
mâ¦
mâ¦
S
pF
pF
pF
â¦
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 40 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 25 A, VGS = 10 V Note4
ID = 25 A, VGS = 4.5 V Note4
ID = 25 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0,
f = 1 MHz
VDD = 10 V, VGS = 4.5 V,
ID = 50 A
VGS = 10 V, ID = 25 A,
VDD â
10 V, RL = 0.4 â¦,
Rg = 4.7 â¦
IF = 50 A, VGS = 0 Note4
IF = 50 A, VGS = 0
diF/ dt = 100 A/ µs
Rev.4.00 Sep 20, 2005 page 2 of 7
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