HAT2164H_05 Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2164H
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS 30
Gate to source breakdown voltage V_(BR)GSS ±20
Gate to source leak current
I_GSS
—
Zero gate voltage drain current
I_DSS
—
Gate to source cutoff voltage
V_GS(off)
0.8
Static drain to source on state
resistance
R_DS(on)
—
R_DS(on)
—
Forward transfer admittance
|y_fs|
78
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Gate Resistance
Rg
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Body–drain diode forward voltage
V_DF
—
Body–drain diode reverse recovery
t_rr
—
time
Notes: 4. Pulse test
Typ
—
—
—
—
—
2.5
3.0
130
7600
1050
470
0.5
50
22
10
18
60
65
15
0.82
40
Max
—
—
±10
1
2.3
3.1
4.4
—
—
—
—
—
—
—
—
—
—
—
—
1.07
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±16 V, V_DS = 0
V_DS = 30 V, V_GS = 0
V_DS = 10 V, I _D = 1 mA
I_D = 30 A, V_GS = 10 V ^Note4
I_D = 30 A, V_GS = 4.5 V ^Note4
I_D = 30 A, V_DS = 10 V ^Note4
V_DS = 10 V, V_GS = 0, f = 1 MHz
V_DD = 10 V, V_GS = 4.5 V,
I_D = 60 A
V_GS = 10 V, I_D = 30 A,
V_DD ≅ 10 V, R_L = 0.33 Ω,
Rg = 4.7 Ω
IF = 60 A, V_GS = 0 ^Note4
IF = 60 A, V_GS = 0
di_F/ dt = 100 A/ µs
Rev.5.00 Sep 26, 2005 page 2 of 7