HAT2087R Datasheet, PDF (2/4 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

HAT2087R
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage
Gate to source voltage
VDSS
250
VGSS
±30
Drain current
Drain peak current
ID
2.5
ID (pulse) ^{Note 1}
20
Body to drain diode reverse drain current
IDR
2.5
Channel dissipation
Pch ^{Note 2}
2.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test Conditions
Drain to source breakdown voltage
Gate to source leak current
V (BR) DSS
250
—
—
IGSS
—
— ±0.1
Zero gate voltage drain current
IDSS
—
—
1
Gate to source cutoff voltage
VGS (off)
3.0
—
4.5
Static drain to source on state resistance RDS (on)
— 0.24 0.31
Forward transfer admittance
|yfs|
2.1
3.5
—
Input capacitance
Ciss
— 830 —
Output capacitance
Coss
— 105 —
Reverse transfer capacitance
Crss
—
21
—
V ID = 10 mA, VGS = 0
µA VGS = ±30 V, VDS = 0
µA VDS = 250 V, VGS = 0
V ID = 1 mA, VDS = 10 V
Ω
ID = 1.25 A, VGS = 10 V ^{Note 3}
S
ID = 1.25 A, VDS = 10 V ^{Note 3}
pF VDS = 25 V
pF VGS = 0
pF f = 1 MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note: 3. Pulse test
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
VDF
trr
— 22.5 —
— 12.5 —
—
82
—
—
17
—
ns VDD = 125 V, ID = 1.25 A
ns VGS = 10 V
ns ^RL ^{= 100 Ω}
ns ^{Rg = 10 Ω}
—
23
—
nC VDD = 200 V
—
3.2
—
nC VGS = 10 V
— 10.4 —
nC ^ID ^{= 2.5 A}
—
0.75 1.15
V
IF = 2.5 A, VGS = 0 ^{Note 3}
—
88
—
ns IF = 2.5 A, VGS = 0
diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 3