HAT2085R Datasheet, PDF (2/4 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

HAT2085R
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage
Gate to source voltage
VDSS
200
VGSS
±30
Drain current
Drain peak current
ID
2
ID (pulse) ^{Note 1}
16
Body to drain diode reverse drain current
IDR
2
Channel dissipation
Pch ^{Note 2}
2.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test Conditions
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
V (BR) DSS
200
—
—
IGSS
—
—
±0.1
IDSS
—
—
1
VGS (off)
3.0
—
4.5
RDS (on)
— 0.49 0.64
|yfs|
1.2
2.0
—
Ciss
—
300
—
Coss
—
43
—
Crss
—
12
—
V ID = 10 mA, VGS = 0
µA VGS = ±30 V, VDS = 0
µA VDS = 200 V, VGS = 0
V ID = 1 mA, VDS = 10 V
Ω
ID = 1 A, VGS = 10 V ^{Note 3}
S
ID = 1 A, VDS = 10 V ^{Note 3}
pF VDS = 25 V
pF VGS = 0
pF f = 1 MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body to drain diode forward voltage
Body to drain diode reverse recovery time
Note: 3. Pulse test
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
VDF
trr
—
21
—
—
12
—
—
45
—
— 10.5 —
ns VDD = 100 V, ID = 1 A
ns VGS = 10 V
ns ^RL ^{= 100 Ω}
ns ^{Rg = 10 Ω}
— 10.2 —
nC VDD = 160 V
—
1.8
—
nC VGS = 10 V
—
4.8
—
nC ^ID ^{= 2 A}
—
0.8
1.2
V
IF = 2 A, VGS = 0 ^{Note 3}
—
75
—
ns IF = 2 A, VGS = 0
diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 3