|
HAT1044M Datasheet, PDF (2/4 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET Power Switching | |||
|
◁ |
HAT1044M
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel dissipation
VDSS
VGSS
ID Note 2
ID (pulse) Note 1
IDR Note 2
Pch (pulse) Note 2
Pch (continuous) Note 3
â30
±20
â4.5
â18
â4.5
2.0
1.05
Channel temperature
Tch
150
Storage temperature
Tstg
â55 to +150
Notes: 1. PW ⤠10 µs, duty cycle ⤠1%
2. When using the alumina ceramic board (50 à 50 à 0.7 mm), PW ⤠5 s, Ta = 25°C
3. When using the alumina ceramic board (50 à 50 à 0.7 mm), Ta = 25°C
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note: 4. Pulse test
Symbol
V (BR) DSS
IGSS
IDSS
VGS (off)
RDS (on)
RDS (on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td (on)
tr
td (off)
tf
VDF
trr
Min Typ Max
â30 â
â
â
â ±0.1
â
â
â1
â1.0 â â2.5
â
50
60
â
80 105
3
5.5 â
â 600 â
â 220 â
â 150 â
â
13
â
â
2
â
â
3
â
â
12
â
â
85
â
â
55
â
â
55
â
â â0.95 â
â
50
â
Unit
V
µA
µA
V
mâ¦
mâ¦
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = â10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = â30 V, VGS = 0
VDS = â10 V, ID = â1 mA
ID = â3 A, VGS = â10 V Note 4
ID = â3 A, VGS = â4.5 V Note 4
ID = â3 A, VDS = â10 V Note 4
VDS = â10 V
VGS = 0
f = 1 MHz
VDS = 10 V
VGS = 0
f = 1 MHz
VGS = â10 V, ID = â3 A,
RL = 3.3 â¦
IF = â4.5 A, VGS = 0 Note 4
IF = â4.5 A, VGS = 0
diF/dt = â20 A/µs
Rev.6.00 Sep 07, 2005 page 2 of 3
|
▷ |