HAT1035R Datasheet, PDF (2/4 Pages) Renesas Technology Corp – Silicon P Channel Power MOSFET High Speed Power Switching

HAT1035R
Electrical Characteristics
Item
Symbol
Drain to Source breakdown
voltage
V_(BR)DSS
Gate to Source breakdown voltage V_(BR)GSS
Gate to Source leak current
I_GSS
Zero Gate voltage Drain current
I_DSS
Gate to Source cutoff voltage
V_GS(off)
Static Drain to Source on state
resistance
R_DS(on)
R_DS(on)
R_DS(on)
Forward transfer admittance
|y_fs|
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
t_d(on)
Rise time
t_r
Turn-off delay time
t_d(off)
Fall time
t_f
Body–Drain diode forward voltage V_DF
Body–Drain diode reverse
t_rr
recovery time
Notes: 4. Pulse test
Min
–150
±15
—
—
–1.0
—
—
—
0.29
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
5.0
6.0
7.0
0.45
92
37
10
10
13
22
15
–0.9
80
Max
—
—
±10
–5
–2.0
6.2
7.5
10.0
—
—
—
—
—
—
—
—
–1.4
—
(Ta = 25°C)
Unit
Test Conditions
V I_D = –10 mA, V_GS = 0
V I_G = ±100 µA, V_DS = 0
µA V_GS = ±12 V, V_DS = 0
µA V_DS = –150 V, V_GS = 0
V V_DS = –10 V, I_D = –1 mA
Ω
I_D = –0.25 A, V_GS = –10 V^Note4
Ω
I_D = –0.25 A, V_GS = –4 V ^Note4
Ω
I_D = –1 A, V_GS = –5 V ^Note4
S
I_D = –0.25 A, V_DS = –10 V ^Note4
pF V_DS = –10 V
pF ^VGS ^{= 0}
pF ^{f = 1 MHz}
ns V_GS = –5 V, I_D = –0.25 A,
ns ^VDD ^{≅ –30 V}
ns
ns
V
IF = –0.25 A, V_GS = 0 ^Note4
ns IF = –0.25 A, V_GS = 0
diF/ dt = 50 A/µs
Rev.1.00 Apr. 22, 2005, 2004 page 2 of 3