H5N3007FL-M0_15 Datasheet, PDF (2/7 Pages) Renesas Technology Corp – 300V - 15A - MOS FET High Speed Power Switching

H5N3007FL-M0
Preliminary
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage
V_(BR)DSS
300
Zero gate voltage drain current
I_DSS
—
Gate to source leak current
I_GSS
—
Gate to source cutoff voltage
V_GS(off)
1.5
Forward transfer admittance
|yfs|
9
Static drain to source on state
resistance
R_DS(on)
—
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Body-drain diode forward voltage
V_DF
—
Body-drain diode reverse recovery time
t_rr
—
Notes: 4. Pulse test
Typ
—
—
—
—
15
0.12
2180
275
77
35
50
160
40
80
10
40
0.85
110
Max
—
10
0.1
4.0
—
0.16
Unit
V
A
A
V
S

(Ta = 25°C)
Test conditions
I_D = 10 mA, V_GS = 0
V_DS = 300 V, V_GS = 0
V_GS = 30 V, V_DS = 0
V_DS = 10 V, I_D = 1 mA
I_D = 7.5 A, V_DS = 10 V ^Note4
I_D = 7.5 A, V_GS = 10 V ^Note4
—
—
—
—
—
—
—
—
—
—
1.30
—
pF V_DS = 25 V
pF ^VGS ^{= 0}
pF ^{f = 1 MHz}
ns I_D = 7.5 A
ns ^VGS ^{= 10 V}
ns ^{RL = 20 }
ns ^{Rg = 10 }
nC V_DD = 240 V
nC ^VGS ^{= 10 V}
nC ^{ID = 15 A}
V I_F = 15 A, V_GS = 0 ^Note4
ns I_F = 15 A, V_GS = 0
di_F/dt = 100 A/s
R07DS0995EJ0100 Rev.1.00
Jan 09, 2013
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