FS30AS-2 Datasheet, PDF (2/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FS30AS-2
Electrical Characteristics
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
(Tch = 25°C)
Symbol Min Typ Max Unit
Test Conditions
V_(BR)DSS
I_GSS
I_DSS
V_GS(th)
r_DS(ON)
V_DS(ON)
| y_fs |
Ciss
Coss
100
—
—
—
—
±0.1
—
—
0.1
2.0
3.0
4.0
—
69
100
—
1.04 1.50
—
18
—
—
1250
—
—
230
—
V
I_D = 1 mA, V_GS = 0 V
µA V_GS = ±20 V, V_DS = 0 V
mA V_DS = 100 V, V_GS = 0 V
V
I_D = 1 mA, V_DS = 10 V
mΩ I_D = 15 A, V_GS = 10 V
V
I_D = 15 A, V_GS = 10 V
S
I_D = 15 A, V_DS = 10 V
pF V_DS = 10 V, V_GS = 0 V,
pF ^{f = 1MHz}
Crss
—
105
—
pF
t_d(on)
—
25
—
ns V_DD = 50 V, I_D = 15 A,
t_r
t_d(off)
—
60
—
ns ^VGS ^{= 10 V,}
—
60
—
ns
R_GEN = R_GS = 50 Ω
t_f
—
50
—
ns
V_SD
—
1.0
1.5
V
I_S = 15 A, V_GS = 0 V
R_th(ch-c)
—
—
3.57 °C/W Channel to case
t_rr
—
95
—
ns I_S = 30 A, d_is/d_t = –100 A/µs
Rev.2.00 Aug 07, 2006 page 2 of 6