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CY20AAJ-8H Datasheet, PDF (2/5 Pages) Renesas Technology Corp – Nch IGBT for Strobe Flasher
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CY20AAJ-8H
Electrical Characteristics
Parameter
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Fall time
Symbol
V(BR)CES
ICES
IGES
VGE(th)
VCE(sat)
tf
Min.
450
—
—
0.5
—
—
Typ.
—
—
—
0.8
4
0.5
Max.
—
10
±10
1.5
8
—
Unit
V
µA
µA
V
V
µs
(Tch = 25°C)
Test conditions
IC = 1 mA, VGE = 0 V
VCE = 400 V, VGE = 0 V
VGE = ±6 V, VCE = 0 V
VCE = 10 V, IC = 1 mA
VCE = 4 V, IC = 130 A
IC = 20 A, VCC = 300 V,
Resistive loads
VGE = 5 V, RG = 30 Ω
Performance Curves
Maximum Pulse Collector Current
(Conductive Capability in Strobe Flasher Applications)
160
Tc = 70°C
CM = 400µF
RG = 30Ω
120 Single pulse
80
40
0
0
2
4
6
8
Gate-Emitter Voltage VGE (V)
Rev.2.00, Nov 29, 2005, page 2 of 4
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