CR6LM-12B Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Thyristor Medium Power Use

CR6LM-12B
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I²t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
Isolation voltage
Symbol
I_{T (RMS)}
I_{T (AV)}
I_TSM
I²t
P_GM
P_{G (AV)}
V_FGM
V_RGM
I_FGM
Tj
Tstg
—
Viso
Ratings
9.4
6
90
34
5
0.5
6
10
2
– 40 to +150
– 40 to +150
1.5
1800
Preliminary
Unit
Conditions
A
A
Commercial frequency, sine half wave
180° conduction, Tc = 110°C
A
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
A²s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
W
W
V
V
A
°C
°C
g
Typical value
V
Ta = 25°C, AC 1 minute,
each terminal to case
Electrical Characteristics
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Symbol
I_RRM
I_DRM
V_TM
Min.
—
—
—
Typ. Max. Unit
—
2.0/5.0 mA
—
2.0/5.0 mA
—
1.7
V
Gate trigger voltage
V_GT
—
—
1.0
V
Gate non-trigger voltage
V_GD
0.2/0.1
—
—
V
Gate trigger current
I_GT
—
—
10
mA
Holding current
I_H
—
15
—
mA
Thermal resistance
R_{th (j-c)}
—
—
4.0 C/W
Notes: 1. The contact thermal resistance R_{th (c-f)} in case of greasing is 0.5°C/W.
Test conditions
Tj = 125°C/150°C, V_RRM applied
Tj = 125°C/150°C, V_DRM applied
Tc = 25°C, I_TM = 20 A,
instantaneous value
Tj = 25°C, V_D = 6 V, I_T = 1 A
Tj = 125°C/150°C, V_D = 1/2 V_DRM
Tj = 25°C, V_D = 6 V, I_T = 1 A
Tj = 25°C, V_D = 12 V
Junction to case^Note1
R07DS0210EJ0100 Rev.1.00
Dec 03, 2010
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