CR6CM-12B Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Thyristor Medium Power Use

CR6CM-12B
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I²t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
Symbol
I_{T (RMS)}
I_{T (AV)}
I_TSM
I²t
P_GM
P_{G (AV)}
V_FGM
V_RGM
I_FGM
Tj
Tstg
—
Ratings
9.4
6
90
41
5
0.5
6
10
2
– 40 to +150
– 40 to +150
2.0
Preliminary
Unit
Conditions
A
A Commercial frequency, sine half wave
180° conduction, Tc = 121°C^Note1
A 50Hz sine half wave 1 full cycle,
peak value, non-repetitive
A²s Value corresponding to 1 cycle of half
wave 50Hz, surge on-state current
W
W
V
V
A
°C
°C
g
Typical value
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max. Unit
Test conditions
Repetitive peak reverse current
I_RRM
—
—
2.0/5.0 mA Tj = 125°C/150°C, V_RRM applied
Repetitive peak off-state current
I_DRM
—
—
2.0/5.0 mA Tj = 125°C/150°C, V_DRM applied
On-state voltage
V_TM
—
—
1.7
V Tc = 25°C, I_TM = 20 A,
instantaneous value
Gate trigger voltage
V_GT
—
—
1.0
V Tj = 25°C, V_D = 6 V, I_T = 1 A
Gate non-trigger voltage
V_GD
0.2/0.1
—
—
V Tj = 125°C/150°C, V_D = 1/2
V_DRM
Gate trigger current
I_GT
—
—
10
mA Tj = 25°C, V_D = 6 V, I_T = 1 A
Holding current
Thermal resistance
I_H
—
R_{th (j-c)}
—
15
—
mA Tj = 25°C, V_D = 12 V
—
2.5
°C/W Junction to case^{Note1 Note2}
Notes: 1. Case temperature is measured at anode tab 1.5 mm away from the molded case.
2. The contact thermal resistance R_{th (c-f)} in case of greasing is 1.0°C/W.
R07DS0230EJ0100 Rev.1.00
Dec 20, 2010
Page 2 of 6