CR03AM-16 Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Thyristor Low Power Use

CR03AM-16
Parameter
RMS on-state current
Average on-state current
Symbol
I_{T (RMS)}
I_{T (AV)}
Ratings
0.47
0.3
Surge on-state current
I²t for fusing
I_TSM
20
I²t
1.6
Peak gate power dissipation
P_GM
0.5
Average gate power dissipation
P_{G (AV)}
0.1
Peak gate forward voltage
V_FGM
6
Peak gate reverse voltage
V_RGM
6
Peak gate forward current
I_FGM
0.3
Junction temperature
Tj
– 40 to +110
Storage temperature
Tstg
– 40 to +125
Mass
—
0.23
Notes: 1. With gate to cathode resistance R_GK = 1 kΩ.
Unit
Conditions
A
A
Commercial frequency, sine half wave
180° conduction, Ta = 47°C
A
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
A²s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
W
W
V
V
A
°C
°C
g
Typical value
Electrical Characteristics
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
Symbol
I_RRM
I_DRM
On-state voltage
V_TM
Gate trigger voltage
V_GT
Gate non-trigger voltage
V_GD
Gate trigger current
I_GT
Holding current
I_H
Thermal resistance
R_{th (j-a)}
Notes: 2. I_GT, V_GT measurement circuit.
Rated value
Min.
Typ.
Max.
—
—
0.1
—
—
0.1
—
—
1.8
—
—
0.8
0.2
—
—
1
—
100
—
1.5
3
—
—
180
Unit
mA
mA
V
V
V
µA
mA
°C/W
Test conditions
Tj = 110°C, V_RRM applied
Tj = 110°C, V_DRM applied,
R_GK = 1 kΩ
Ta = 25°C, I_TM = 4 A,
instantaneous value
Tj = 25°C, V_D = 6 V,
I_T = 0.1 A^Note2
Tj = 110°C, V_D = 1/2 V_DRM,
R_GK = 1 kΩ
Tj = 25°C, V_D = 6 V,
I_T = 0.1 A^Note2
Tj = 25°C, V_D = 12 V,
R_GK = 1 kΩ
Junction to ambient
60Ω
A1
IGS IGT
TUT
A3 A2
3V
DC
RGK
1
V1
2
6V
DC
1kΩ
VGT
Switch
Switch 1 : IGT measurement
Switch 2 : VGT measurement
(Inner resistance of voltage meter is about 1kΩ)
Rev.1.00, Aug.20.2004, page 2 of 7