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BCR8FM12LB Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Triac | |||
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BCR8FM-12LB
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
VTM
Min.
â
â
Gate trigger voltageNote2
Gate trigger curentNote2
Î
VFGTÎ
â
ÎÎ VRGTÎ
â
ÎÎÎ VRGTÎÎÎ
â
Î
IFGTÎ
â
ÎÎ
IRGTÎ
â
ÎÎÎ IRGTÎÎÎ
â
Typ.
â
â
â
â
â
â
â
â
Max.
2.0
1.6
1.5
1.5
1.5
30 Note5
30 Note5
30 Note5
Unit
mA
V
V
V
V
mA
mA
mA
Test conditions
Tj = 150°C, VDRM applied
Tc = 25°C, ITM = 12A,
instantaneous measurement
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate non-trigger voltage
VGD
0.2
â
â
V
Tj = 125°C, VD = 1/2 VDRM
Thermal resistance
0.1
â
â
Tj = 150°C, VD = 1/2 VDRM
Rth (j-c)
â
â
3.6
°C/W Junction to caseNote3
Critical-rate of rise of off-state (dv/dt)c 10
â
â
V/μs Tj = 125°C
commutation voltageNote4
1
â
â
Tj = 150°C
Notes: 1. Gate open.
2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact themal resistance Rth (c-f) in case of greasing is 0.5°C /W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
5. High sensitivity (IGTâ¤20mA) is also available.(IGT item:1)
6. Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2.Rate of rise of off-state commutating voltage
(dv/dt)c =-4 A/ms
3.Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
R07DS1186EJ0100 Rev.1.00
Mar 03, 2014
Page 2 of 7
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