BCR8FM-20LA Datasheet, PDF (2/8 Pages) Renesas Technology Corp – 1000V - 8A - Triac

BCR8FM-20LA
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
VTM
Gate trigger voltage^Note2
Gate trigger current^Note2

VFGT

VRGT

VRGT

IFGT

IRGT

IRGT
Min.
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
—
—
—
—
Max.
2.0
1.6
1.5
1.5
1.5
30
30
30
Unit
mA
V
V
V
V
mA
mA
mA
Test conditions
Tj = 125°C, VDRM applied
Tc = 25°C, ITM = 12 A,
Instantaneous measurement
Tj = 25°C, VD = 6 V, RL = 6 ,
RG = 330 
Tj = 25°C, VD = 6 V, RL = 6 ,
RG = 330 
Gate non-trigger voltage
VGD
0.2
—
—
V
Tj = 125C, VD = 1/2 VDRM
Thermal resistance
Rth (j-c)
—
—
4.3
°C/W Junction to case^Note3
Critical-rate of rise of off-state
(dv/dt)c
10
—
—
V/s Tj = 125°C
commutating voltage^Note4
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 4.0 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Main Current
Main Voltage
(dv/dt)c
Time
(di/dt)c
Time
Time
V_D
R07DS1326EJ0200 Rev.2.00
Apr 1, 2017
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