BCR8FM-14LB_15 Datasheet, PDF (2/8 Pages) Renesas Technology Corp – 700V – 8A - Triac Medium Power Use

BCR8FM-14LB
Parameter
RMS on-state current
Surge on-state current
I²t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage ^Note6
Symbol
I_{T (RMS)}
I_TSM
I²t
P_GM
P_{G (AV)}
V_GM
I_GM
Tj
Tstg
—
V_iso
Ratings
8
80
26
5
0.5
10
2
–40 to +150
–40 to +150
1.9
2000
Unit
A
A
A²s
W
W
V
A
°C
°C
g
V
Preliminary
Conditions
Commercial frequency, sine full wave
360°conduction,
Tc = 114°C (#BB0, See Ordering Info.)
107°C (#FA0, See Ordering Info.)
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Typical value
Ta=25°C, AC 1 minute,
T₁ • T₂ • G terminal to case
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
I_DRM
V_TM
Min.
—
—
Gate trigger voltage^Note2
Gate trigger curent^Note2
Ι
V_FGTΙ
—
ΙΙ V_RGTΙ
—
ΙΙΙ V_{RGTΙΙΙ}
—
Ι
I_FGTΙ
—
ΙΙ
I_RGTΙ
—
ΙΙΙ I_{RGTΙΙΙ}
—
Typ.
—
—
—
—
—
—
—
—
Max.
2.0
1.6
1.5
1.5
1.5
30 ^Note5
30 ^Note5
30 ^Note5
Unit
mA
V
V
V
V
mA
mA
mA
Test conditions
Tj = 150°C, V_DRM applied
Tc = 25°C, I_TM = 12A,
instantaneous measurement
Tj = 25°C, V_D = 6 V, R_L = 6 Ω,
R_G = 330 Ω
Tj = 25°C, V_D = 6 V, R_L = 6 Ω,
R_G = 330 Ω
Gate non-trigger voltage
Thermal resistance
V_GD
0.2
—
—
V
Tj = 125°C, V_D = 1/2 V_DRM
0.1
—
—
Tj = 150°C, V_D = 1/2 V_DRM
R_{th (j-c)}
—
—
3.6
°C/W Junction to case^Note3
#BB0 (See Ordering Info.)
—
—
4.3
°C/W Junction to case^Note3
#FA0 (See Ordering Info.)
Critical-rate of rise of off-state (dv/dt)c 10
—
—
V/μs Tj = 125°C
commutation voltage^Note4
1
—
—
Tj = 150°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact themal resistance R_{th (c-f)} in case of greasing is 0.5°C /W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
5. High sensitivity (I_GT≤20mA) is also available.(I_GT item:1)
6. Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2.Rate of rise of off-state commutating voltage
(dv/dt)c =-4 A/ms
3.Peak off-state voltage
V_D = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
V_D
R07DS1187EJ0200 Rev.2.00
Aug 07, 2014
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