BCR8AS-14LJ Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Triac Medium Power Use

BCR8AS-14LJ
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
I_DRM
V_TM
Gate trigger voltage^Note2



Gate trigger curent^Note2



Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutation voltage^Note4
V_FGT
V_RGT
V_{RGT}
I_FGT
I_RGT
I_{RGT}
V_GD
R_{th (j-c)}
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
0.2
—
10
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.6
1.5
1.5
1.5
30
30
30
—
2.7
—
Unit
mA
V
V
V
V
mA
mA
mA
V
C/W
V/s
Test conditions
Tj = 125C, V_DRM applied
Tc = 25C, I_TM = 12 A,
instantaneous measurement
Tj = 25C, V_D = 6 V, R_L = 6 ,
R_G = 330 
Tj = 25C, V_D = 6 V, R_L = 6 ,
R_G = 330 
Tj = 125C, V_D = 1/2 V_DRM
Junction to case^Note3
Tj = 125C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured on the T₂ tab.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below
Test conditions
1. Junction temperature
Tj = 125C
2. Rate of decay of on-state commutating current
(di/dt)c = –4.0 A/ms
3. Peak off-state voltage
V_D = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
V_D
R07DS0514EJ0100 Rev.1.00
Oct 14, 2011
Page 2 of 6