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BCR5LM-12LB_15 Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Triac Medium Power Use | |||
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BCR5LM-12LB
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
VTM
Gate trigger voltageNote2
ï
VFGTï
ïï
VRGTï
ïïï
VRGTïïï
Gate trigger curentNote2
ï
IFGTï
ïï
IRGTï
ïïï
IRGTïïï
Min.
â
â
â
â
â
â
â
â
Typ.
â
â
â
â
â
â
â
â
Max.
2.0
1.8
1.5
1.5
1.5
20
20
20
Unit
mA
V
V
V
V
mA
mA
mA
Test conditions
Tj = 150ï°C, VDRM applied
Tc = 25ï°C, ITM = 7 A,
instantaneous measurement
Tj = 25ï°C, VD = 6 V, RL = 6 ï,
RG = 330 ï
Tj = 25ï°C, VD = 6 V, RL = 6 ï,
RG = 330 ï
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutation voltageNote4
VGD
0.2/0.1
â
Rth (j-c)
â
â
(dv/dt)c 5/1
â
â
V
Tj = 125ï°C/150ï°C, VD = 1/2 VDRM
4.9
ï°C/W Junction to caseNote3
â
V/ïs Tj = 125ï°C/150ï°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5ï°C/W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125ï°C/150ï°C
2. Rate of decay of on-state commutating current
(di/dt)c = â2.5 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
R07DS0065EJ0100 Rev.1.00
Jul 27, 2010
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