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BCR5KM-12 Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Triac Medium Power Use | |||
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BCR5KM-12
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
Symbol
IT(RMS)
ITSM
I2t
PGM
PG(AV)
VGM
IGM
Tj
Tstg
â
Viso
Ratings
5
50
10.4
3
0.3
10
2
â 40 to +125
â 40 to +125
2.0
2000
Unit
Conditions
A
Commercial frequency, sine full wave
360° conduction, Tc = 103°C
A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
A2s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
W
W
V
A
°C
°C
g
V
Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Electrical Characteristics
Parameter
Symbol Min. Typ. Max. Unit
Repetitive peak off-state current
IDRM
â
â
2.0
mA
On-state voltage
VTM
â
â
1.5
V
Gate trigger voltageNote2
I
VFGTÎ
â
â
1.5
V
II
VRGTÎ
â
â
1.5
V
III
VRGTÎÎÎ
â
â
1.5
V
Gate trigger currentNote2
I
IFGTÎ
â
â
15Note3
mA
II
IRGTÎ
â
â
15Note3
mA
III
IRGTÎÎÎ
â
â
15Note3
mA
Gate non-trigger voltage
VGD
0.2
â
â
V
Thermal resistance
Rth(j-c)
â
â
3.8
°C/W
Thermal resistance
Rth(j-a)
â
â
50
°C/W
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. High sensitivity (IGT ⤠10 mA) is also available. (IGT item: 1)
4. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
Test conditions
Tj = 125°C, VDRM applied
Tc = 25°C, ITM = 7 A,
Instantaneous measurement
Tj = 25°C, VD = 6 V, RL = 6 â¦,
RG = 330 â¦
Tj = 25°C, VD = 6 V, RL = 6 â¦,
RG = 330 â¦
Tj = 125°C, VD = 1/2 VDRM
Junction to caseNote4
Junction to ambient
Rev.2.00, Nov.09.2004, page 2 of 6
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