BCR5AS-14A_15 Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Triac Medium Power Use

BCR5AS-14A
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage^Note2



Gate trigger curent^Note2



Symbol
I_DRM
V_TM
V_FGT
V_RGT
V_{RGT}
I_FGT
I_RGT
I_{RGT}
Min.
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
—
—
—
—
Max.
2.0
1.8
1.5
1.5
1.5
30
30
30
Unit
mA
V
V
V
V
mA
mA
mA
Test conditions
Tj = 125C, V_DRM applied
Tc = 25C, I_TM = 7 A,
instantaneous measurement
Tj = 25C, V_D = 6 V, R_L = 6 ,
R_G = 330 
Tj = 25C, V_D = 6 V, R_L = 6 ,
R_G = 330 
Gate non-trigger voltage
Thermal resistance
V_GD
0.2
—
—
V
Tj = 125C, V_D = 1/2 V_DRM
R_{th (j-c)}
—
—
3.0
C/W Junction to case^Note3
Critical-rate of rise of off-state
(dv/dt)c
5
commutation voltage^Note4
—
—
V/s Tj = 125C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured on the T2 tab.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125C
2. Rate of decay of on-state commutating current
(di/dt)c = –2.5 A/ms
3. Peak off-state voltage
V_D = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
V_D
R07DS0671EJ0100 Rev.1.00
Jul 23, 2012
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