BCR4AS-16LH Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Triac Medium Power Use

BCR4AS-16LH
Preliminary
Electrical Characteristics
Parameter
BCR4AS-16LH-1
Symbol
(I_GT item : 1)
BCR4AS-16LH
Unit Test conditions
Min. Typ. Max. Min. Typ. Max.
Repetitive peak off-state current I_DRM
—
— 2.0
—
— 2.0 mA Tj = 150°C
V_DRM applied
On-state voltage
V_TM
—
— 1.6
—
— 1.6 V Tc = 25°C, ITM = 6 A
instantaneous
measurement
Gate trigger voltage^Note2
Ι
V_FGTΙ
—
— 1.5 —
— 1.5 V Tj = 25°C, VD = 6 V
ΙΙ
V_RGTΙ
—
— 1.5
—
—
1.5
V ^{RL = 6 Ω, RG = 330 Ω}
Gate trigger curent^Note2
ΙΙΙ V_{RGTΙΙΙ} —
— 1.5
—
— 1.5 V
Ι
I_FGTΙ
—
—
10
—
—
35 mA Tj = 25°C, VD = 6 V
ΙΙ
I_RGTΙ
—
—
10
—
—
35 mA ^RL ^{= 6 Ω, R}G ^{= 330 Ω}
ΙΙΙ I_{RGTΙΙΙ}
—
—
10
—
—
35 mA
Gate non-trigger voltage
V_GD
0.2
—
—
0.2
—
—
V Tj = 125°C
V_D = 1/2 V_DRM
0.1 —
— 0.1 —
—
V Tj = 150°C
Thermal resistance
R_{th (j-c)}
—
— 3.8 —
V_D = 1/2 V_DRM
—
3.8 °C/W ^{Junction to caseNote3}
Critical-rate of decay of on-state (di/dt)c 2.5 —
—
—
—
— A/ms Tj = 125°C
commutating current ^Note4
(dv/dt)c < 10 V/μs
—
—
— 3.0 —
— A/ms Tj = 125°C
(dv/dt)c < 100 V/μs
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured on the T₂ tab.
4. Test conditions of the critical-rate of decay of on-state commutating current is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Peak off-state voltage
V_D = 400 V
2. Rate of rise of off-state commutating voltage
(dv/dt)c < 10 V/μs (I_GT item : 1)
(dv/dt)c < 100 V/μs
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
V_D
R07DS0331EJ0100 Rev.1.00
Apr 28, 2011
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