BCR3LM-12LB_15 Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Triac Medium Power Use

BCR3LM-12LB
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
I_DRM
V_TM
Gate trigger voltage^Note2
Gate trigger curent^Note2

V_FGT

V_RGT

V_{RGT}

I_FGT

I_RGT

I_{RGT}
Min.
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
20
20
20
Unit
mA
V
V
V
V
mA
mA
mA
Test conditions
Tj = 150C, V_DRM applied
Tc = 25C, I_TM = 4.5 A,
instantaneous measurement
Tj = 25C, V_D = 6 V, R_L = 6 ,
R_G = 330 
Tj = 25C, V_D = 6 V, R_L = 6 ,
R_G = 330 
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutation voltage^Note4
V_GD
0.2/0.1
—
R_{th (j-c)}
—
—
(dv/dt)c 5/1
—
—
V
Tj = 125C/150C, V_D = 1/2 V_DRM
5.2
C/W Junction to case^Note3
—
V/s Tj = 125C/150C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance R_{th (c-f)} in case of greasing is 0.5C/W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = –1.5 A/ms
3. Peak off-state voltage
V_D = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
V_D
R07DS0063EJ0100 Rev.1.00
Jul 27, 2010
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