BCR3AS-12A_15 Datasheet, PDF (2/9 Pages) Renesas Technology Corp – Triac Low Power Use

BCR3AS-12A
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak off-state current
I_DRM
—
—
2.0
mA Tj = 125°C, V_DRM applied
On-state voltage
V_TM
—
—
1.7
V
Tc = 25°C, I_TM = 4.5 A,
Instantaneous measurement
Gate trigger voltage^Note2
I
V_{FGT I}
—
—
1.5
V
Tj = 25°C, V_D = 6 V, R_L = 6 Ω,
II
V_{RGT I}
—
—
1.5
V
R_G = 330 Ω
III
V_{RGT III}
—
—
1.5
V
Gate trigger current ^Note2
I
I_{FGT I}
—
—
15
mA Tj = 25°C, V_D = 6 V, R_L = 6 Ω,
II
I_{RGT I}
—
—
15
mA RG = 330 Ω
III
I_{RGT III}
—
—
15
mA
Gate non-trigger voltage
Thermal resistance
V_GD
0.2
—
—
V
Tj = 125°C, V_D = 1/2 V_DRM
R_th(j-c)
—
—
3.8
°C/W Junction to case^Note3
Critical-rate of rise of off-state
commutating voltage ^Note4
(dv/dt)c
5
—
—
V/µs Tj = 125°C
Notes: 2. Measurement using the gate trigger characteristics measureme circuit.
3. Case temperature is measured on the T₂ tab.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = –1.5 A/ms
3. Peak off-state voltage
V_D = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
V_D
REJ03G0288-0400 Rev.4.00 Dec 19, 2008
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