BCR30CM-8LB_15 Datasheet, PDF (2/8 Pages) Renesas Technology Corp – 400V-30A-Triac Medium Power Use

BCR30CM-8LB
Preliminary
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak off-state current
I_DRM
—
—
3.0
mA Tj = 125°C, V_DRM applied
—
—
5.0
mA Tj = 150°C, V_DRM applied
On-state voltage
V_TM
—
—
1.5
V
Tc = 25°C, I_TM = 45 A,
Instantaneous measurement
Gate trigger voltage^Note2
I
V_{FGT I}
—
—
2.0
V
Tj = 25°C, V_D = 6 V, R_L = 6 Ω,
II
V_{RGT I}
—
—
2.0
V
R_G = 330 Ω
III
V_{RGT III}
—
Gate trigger current^Note2
I
I_{FGT I}
—
—
2.0
V
—
30
mA Tj = 25°C, V_D = 6 V, R_L = 6 Ω,
II
I_{RGT I}
—
—
30
mA RG = 330 Ω
III
I_{RGT III}
—
—
30
mA
Gate non-trigger voltage
V_GD
0.2
—
—
V
Tj = 125°C, V_D = 1/2 V_DRM
Thermal resistance
0.1
—
—
V/μs Tj = 150°C, V_D = 1/2 V_DRM
R_th(j-c)
—
—
1.1
°C/W Junction to case^{Note3 Note4}
Critical-rate of rise of off-state
(dv/dt)c
10
—
—
V/μs Tj = 125°C
commutating voltage^Note5
1
—
—
V/μs Tj = 150°C
Notes: 1. Gate open.
2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T₂ tab 1.5 mm apart from the molded case.
4. The contact thermal resistance R_{th (c-f)} in case of greasing is 1.0°C /W.
5. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125/150°C
2. Peak off-state voltage
V_D = 400 V
3. Rate of decay of on-state commutating current
(di/dt)c = –16 A/ms
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
V_D
R07DS1105EJ0100 Rev.1.00
Aug 08, 2013
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