BCR30AM-12LB Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)

BCR30AM-12LB (The product guaranteed maximum junction temperature of 150°C)
Parameter
RMS on-state current
Surge on-state current
I²t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Notes: 1. Gate open.
Symbol
I_T(RMS)
I_TSM
I²t
P_GM
P_G(AV)
V_GM
I_GM
Tj
Tstg
—
Ratings
30
300
378
5
0.5
10
2
– 40 to +150
– 40 to +150
4.8
Unit
Conditions
A
Commercial frequency, sine full wave,
Tc = 100°C
A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
A²s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
W
W
V
A
°C
°C
g
Typical value
Electrical Characteristics
Parameter
Symbol Min. Typ. Max. Unit
Test conditions
Repetitive peak off-state current
I_DRM
—
— 3.0/5.0 mA Tj = 125°C/150°C, V_DRM applied
On-state voltage
V_TM
—
—
Gate trigger voltage^Note2
Ι
V_FGTΙ
—
—
ΙΙ
V_RGTΙ
—
—
ΙΙΙ
V_{RGTΙΙΙ}
—
—
Gate trigger current^Note2
Ι
I_FGTΙ
—
—
ΙΙ
I_RGTΙ
—
—
ΙΙΙ
I_{RGTΙΙΙ}
—
—
Gate non-trigger voltage
V_GD
0.2/0.1
—
Thermal resistance
R_th(j-c)
—
—
Critical-rate of rise of off-state
commutating voltage^Note4
(dv/dt)c 20/2
—
1.6
V Tc = 25°C, I_TM = 45A
2.5
V Tj = 25°C, V_D = 6 V, R_L = 6 Ω,
2.5
V RG = 330 Ω
2.5
V
50
mA Tj = 25°C, V_D = 6 V, R_L = 6 Ω,
50
mA RG = 330 Ω
50
mA
—
V
Tj = 125°C/150°C, V_D = 1/2V_DRM
1.2
°C/W Junction to case^Note3
—
V/µs Tj = 125°C/150°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance R_{th (c-f)} in case of greasing is 0.3°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = –16 A/ms
3. Peak off-state voltage
V_D = 400 V
Commutating voltage and current waveforms
inductive load
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
V_D
REJ03G0472-0300 Rev.3.00 Nov 30, 2007
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