BCR2EM-14LB Datasheet, PDF(2/4 Page) Renesas Technology Corp

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BCR2EM-14LB Datasheet, PDF (2/4 Pages) Renesas Technology Corp – 700V - 2A - Triac Medium Power Use

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BCR2EM-14LB

Preliminary

Electrical Characteristics

Parameter

Symb Min.

Typ.

Max.

Unit

Test conditions

Repetitive peak off-state current IDRM

2.0

mA Tj = 150ï°C, VDRM applied

On-state voltage

VTM

2.1

Tc = 25ï°C, ITM = 3A,

instantaneous measurement

Gate trigger voltageNote2

VFGTï

2.0

Tj = 25ï°C, VD = 6 V, RL = 6 ï,

ïï VRGTï

2.0

RG = 330 ï

ïïï VRGTïïï

2.0

Gate trigger curentNote2

IFGTï

mA Tj = 25ï°C, VD = 6 V, RL = 6 ï,

ïï

IRGTï

mA RG = 330 ï

ïïï IRGTïïï

Gate non-trigger voltage

Thermal resistance

VGD

0.2

Tj = 125ï°C, VD = 1/2 VDRM

0.1

Tj = 150ï°C, VD = 1/2 VDRM

Rth (j-c)

4.0

ï°C/W Junction to caseNote3

Rth (j-a)

ï°C/W Junction to ambient

Natural convection, No fins

Critical-rate of rise of off-state (dv/dt)c 0.5

commutation voltageNote4

V/ïs Tj = 125ï°C

Notes: 1. Gate open.

2. Measurement using the gate trigger characteristics measurement circuit.

3. Case temperature is measured at the T2 terminal 2.0 mm apart from the molded case.

4. Test conditions of the critical-rate of rise of off-state commutating voltage shown in the table below.

Test conditions

1. Junction temperature

Tj = 125ï°C

2. Rate of decay of on-state commutating current

(di/dt)c = ï1.0 A/ms

3. Peak off-state voltage

VD = 400 V

Commutating voltage and current waveforms

(inductive load)

Supply Voltage

Time

Main Current

Main Voltage

(dv/dt)c

(di/dt)c

Time

R07DS0968EJ0001 Rev.0.01

Nov 28, 2012

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