BCR20CM12LB Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Triac

BCR20CM-12LB
Preliminary
Electrical Characteristics
Parameter
Symbol
Rated value
Min. Typ. Max.
Unit
Test conditions
Repetitive peak off-state current
I_DRM
—
—
2.0
mA Tj = 125°C, V_DRM applied
—
—
3.0
Tj = 150°C, V_DRM applied
On-state voltage
V_TM
—
—
1.5
V
Tc = 25°C, I_TM = 30A,
instantaneous measurement
Gate trigger voltage^Note2
Ι
V_FGTΙ
—
ΙΙ
V_RGTΙ
—
Gate trigger curent^Note2
ΙΙΙ V_{RGTΙΙΙ}
—
Ι
I_FGTΙ
—
ΙΙ
I_RGTΙ
—
ΙΙΙ
I_{RGTΙΙΙ}
—
—
1.5
—
1.5
V
Tj = 25°C, V_D = 6 V, R_L = 6 Ω,
V
R_G = 330 Ω
—
1.5
V
—
30 ^Note6
mA Tj = 25°C, V_D = 6 V, R_L = 6 Ω,
—
30 ^Note6
mA ^RG ^{= 330 Ω}
—
30 ^Note6
mA
Gate non-trigger voltage
V_GD
0.2
—
—
V
Tj = 125°C, V_D = 1/2 V_DRM
Thermal resistance
0.1
—
—
V
Tj = 150°C, V_D = 1/2 V_DRM
R_{th (j-c)}
—
—
1.2
°C/W Junction to case^{Note3, Note4}
Critical-rate of rise of off-state
(dv/dt)c 10
—
—
V/μs Tj = 125°C
commutation voltage^Note5
1
—
—
Tj = 150°C
Notes: 1. Gate open.
2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T₂ tab 1.5 mm apart from the molded case.
4. The contact thermal resistance R_{th (c-f)} in case of greasing is 1.0°C /W.
5. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
6. High sensitivity (IGT≤20 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125/150°C
2. Peak off-state voltage
V_D = 400 V
3. Rate of decay of on-state commutating current
(di/dt)c = –10 A/ms
Commutating voltage and current waveforms
(inductive load)
R07DS1151EJ0100 Rev.1.00
Jan 29, 2014
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