BCR1BM-16A_15 Datasheet, PDF(2/4 Page) Renesas Technology Corp

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BCR1BM-16A_15 Datasheet, PDF (2/4 Pages) Renesas Technology Corp – 800V - 1A - Triac Low Power Use

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BCR1BM-16A

Preliminary

Electrical Characteristics

Parameter

Symbol Min.

Typ.

Max.

Unit

Test conditions

Repetitive peak off-state current

IDRM

1.0

mA Tj = 125Â°C, VDRM applied

On-state voltage

VTM

2.0

Tc = 25Â°C, ITM = 1.2 A,

Instantaneous measurement

Gate trigger voltageNote2

VFGTï

2.0

Tj = 25Â°C, VD = 6 V, RL = 6 ï,

ïï

VRGTï

2.0

RG = 330 ï

ïïï

VRGTïïï

2.0

Gate trigger currentNote2

IFGTï

mA Tj = 25Â°C, VD = 6 V, RL = 6 ï,

ïï

IRGTï

mA RG = 330 ï

ïïï

IRGTïïï

Gate non-trigger voltage

Thermal resistance

VGD

0.1

Tj = 125Â°C, VD = 1/2 VDRM

Rth (j-c)

Â°C/W Junction to caseNote3

Critical-rate of rise of off-state

(dv/dt)c

0.5

V/ïs Tj = 125Â°C

commutating voltageNote4

Notes: 1. Gate open.

2. Measurement using the gate trigger characteristics measurement circuit.

3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case.

4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.

Test conditions

1. Junction temperature

Tj = 125Â°C

2. Rate of decay of on-state commutating current

(di/dt)c = â 0.5 A/ms

3. Peak off-state voltage

VD = 400 V

Commutating voltage and current waveforms

(inductive load)

Supply Voltage

Time

Main Current

Main Voltage

(dv/dt)c

(di/dt)c

Time

R07DS0967EJ0001 Rev.0.01

Nov 28, 2012

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