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BCR1AM-8P Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Triac Low Power Use | |||
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BCR1AM-8P
Preliminary
Electrical Characteristics
Parameter
Rated value
Symbol
Unit
Min.
Typ.
Max.
Test conditions
Repetitive peak off-state current
IDRM
â
On-state voltage
VTM
â
Gate trigger voltageNote2
ï
VFGTï
â
ïï
VRGTï
â
ïïï
VRGTïïï
â
ïV
VFGTïïï
â
Gate trigger currentNote2
ï
IFGTï
â
ïï
IRGTï
â
ïïï
IRGTïïï
â
ïV
IFGTïïï
â
â
0.5
mA Tj = 125ï°C, VDRM applied
â
1.6
V
Tc = 25ï°C, ITM = 1.5 A,
Instantaneous measurement
â
2.0
V
Tj = 25ï°C, VD = 6 V, RL = 6 ï,
â
2.0
V
RG = 330 ï
â
2.0
V
â
2.0
V
â
5
mA Tj = 25ï°C, VD = 6 V, RL = 6 ï,
â
5Note5
mA RG = 330 ï
â
5Note5
mA
â
10
mA
Gate non-trigger voltage
Thermal resistance
VGD
0.1
â
â
V
Tj = 125ï°C, VD = 1/2 VDRM
Rth (j-c)
â
â
50
ï°C/W Junction to caseNote3
Critical-rate of rise of off-state
commutating voltageNote4
(dv/dt)c
2
â
â
V/ïs Tj = 125ï°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
5. High sensitivity (IGT ï£ 3 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125ï°C
2. Rate of decay of on-state commutating current
(di/dt)c = â 0.5 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
R07DS0178EJ0100 Rev.1.00
Sep 29, 2010
Page 2 of 6
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