BCR1AM-14A_15 Datasheet, PDF (2/7 Pages) Renesas Technology Corp – 700V-1A-Triac Low Power Use

BCR1AM-14A
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
Symbol
I_DRM
BCR1AM-14A-1
(I_GT item : 1)
Min. Typ. Max.
— — 0.5
On-state voltage
V_TM
—
— 1.6
Gate trigger voltage^Note2
Gate trigger curent^Note2
I
V_FGTΙ
—
II
V_RGTΙ
—
III V_{RGTΙΙΙ} —
IV V_{FGTΙΙΙ}
—
I
I_FGTΙ
—
II
I_RGTΙ
—
III I_{RGTΙΙΙ}
—
— 2.0
— 2.0
— 2.0
— 2.0
—
5
—
3
—
3
BCR1AM-14A
Unit Test conditions
Min.
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
—
—
—
—
—
Max.
0.5
1.6
2.0
2.0
2.0
2.0
5
5
5
mA Tj = 125°C
V_DRM applied
V Tc = 25°C, ITM = 1.5 A
instantaneous
measurement
V Tj = 25°C, VD = 6 V
V ^RL ^{= 6 Ω, R}G ^{= 330 Ω}
V
V
mA Tj = 25°C, VD = 6 V
mA ^{RL = 6 Ω, RG = 330 Ω}
mA
IV
I_{FGTΙΙΙ}
—
—
10
—
—
10 mA
Gate non-trigger voltage
Thermal resistance
V_GD
0.1
—
—
0.1
—
—
V Tj = 125°C
V_D = 1/2 V_DRM
R_{th (j-c)}
—
—
50
—
—
50 °C/W ^{Junction to caseNote3}
Critical-rate of rise of off-state (dv/dt)c 1.0 —
— 2.0 —
— V/μs Tj = 125°C
commutating voltage^Note4
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 0.5 A/ms
3. Peak off-state voltage
V_D = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
V_D
R07DS1076EJ0200 Rev.1.00
Apr 03, 2014
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