BCR1AM-12A_10 Datasheet, PDF(2/7 Page) Renesas Technology Corp

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BCR1AM-12A_10 Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Triac Low Power Use

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BCR1AM-12A

Preliminary

Electrical Characteristics

Parameter

Rated value

Symbol

Unit

Min.

Typ.

Max.

Test conditions

Repetitive peak off-state current

IDRM

0.5

mA Tj = 125ï°C, VDRM applied

On-state voltage

VTM

1.6

Tc = 25ï°C, ITM = 1.5 A,

Instantaneous measurement

Gate trigger voltageNote2

VFGTï

2.0

Tj = 25ï°C, VD = 6 V, RL = 6 ï,

ïï

VRGTï

2.0

RG = 330 ï

ïïï

VRGTïïï

2.0

Gate trigger currentNote2

IFGTï

mA Tj = 25ï°C, VD = 6 V, RL = 6 ï,

ïï

IRGTï

mA RG = 330 ï

ïïï

IRGTïïï

Gate non-trigger voltage

Thermal resistance

VGD

0.1

Tj = 125ï°C, VD = 1/2 VDRM

Rth (j-c)

ï°C/W Junction to caseNote3

Critical-rate of rise of off-state

commutating voltageNote4

(dv/dt)c

V/ïs Tj = 125ï°C

Notes: 2. Measurement using the gate trigger characteristics measurement circuit.

3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case.

4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.

Test conditions

1. Junction temperature

Tj = 125ï°C

2. Rate of decay of on-state commutating current

(di/dt)c = â 0.5 A/ms

3. Peak off-state voltage

VD = 400 V

Commutating voltage and current waveforms

(inductive load)

Supply Voltage

Time

Main Current

Main Voltage

(dv/dt)c

(di/dt)c

Time

R07DS0177EJ0300 Rev.3.00

Sep 29, 2010

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