BCR16LM-12LB_15 Datasheet, PDF (2/10 Pages) Renesas Technology Corp – Triac Medium Power Use

BCR16LM-12LB
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
I_DRM
V_TM
Gate trigger voltage^Note2
Gate trigger curent^Note2
Ι
V_FGTΙ
ΙΙ
V_RGTΙ
ΙΙΙ
V_{RGTΙΙΙ}
Ι
I_FGTΙ
ΙΙ
I_RGTΙ
ΙΙΙ
I_{RGTΙΙΙ}
Min.
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
30
30
30
Unit
mA
V
V
V
V
mA
mA
mA
Test conditions
Tj = 150°C, V_DRM applied
Tc = 25°C, I_TM = 25 A,
instantaneous measurement
Tj = 25°C, V_D = 6 V, R_L = 6 Ω,
R_G = 330 Ω
Tj = 25°C, V_D = 6 V, R_L = 6 Ω,
R_G = 330 Ω
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutation voltage^Note4
V_GD
0.2/0.1
—
R_{th (j-c)}
—
—
(dv/dt)c 10/1
—
—
V
Tj = 125°C/150°C, V_D = 1/2 V_DRM
3.5
°C/W Junction to case^Note3
—
V/µs Tj = 125°C/150°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance R_{th (c-f)} in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = –8.0 A/ms
3. Peak off-state voltage
V_D = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
V_D
REJ03G1805-0100 Rev.1.00 Jul 22, 2009
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