BCR16CS-16LB_15 Datasheet, PDF(2/8 Page) Renesas Technology Corp

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BCR16CS-16LB_15 Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Triac Medium Power Use

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BCR16CS-16LB

Preliminary

Electrical Characteristics

Parameter

Symbol Min. Typ. Max. Unit

Test conditions

Repetitive peak off-state current

IDRM

2.0

mA Tj = 150ï°C, VDRM applied

On-state voltage

VTM

1.5

V Tc = 25ï°C, ITM = 25 A,

Instantaneous measurement

Gate trigger voltageNote2

VFGTï

1.5

V Tj = 25ï°C, VD = 6 V, RL = 6 ï,

ïï

VRGTï

1.5

RG = 330 ï

ïïï

VRGTïïï

1.5

Gate trigger currentNote2

IFGTï

mA Tj = 25ï°C, VD = 6 V, RL = 6 ï,

ïï

IRGTï

mA RG = 330 ï

ïïï

IRGTïïï

Gate non-trigger voltage

Thermal resistance

Critical-rate of rise of off-state

commutating voltageNote5

VGD

0.2/0.1

Rth (j-c)

(dv/dt)c 10/1

Tj = 125ï°C/150ï°C, VD = 1/2 VDRM

1.4

ï°C/W Junction to caseNote3 Note4

V/ïs Tj = 125ï°C/150ï°C

Notes: 2. Measurement using the gate trigger characteristics measurement circuit.

3. Case temperature is measured on the T2 tab.

4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0Â°C/W.

5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.

Test conditions

1. Junction temperature

Tj = 125ï°C/150ï°C

2. Rate of decay of on-state commutating current

(di/dt)c = â 8.0 A/ms

3. Peak off-state voltage

VD = 400 V

Commutating voltage and current waveforms

(inductive load)

Supply Voltage

Time

Main Current

Main Voltage

(dv/dt)c

(di/dt)c

Time

R07DS0226EJ0100 Rev.1.00

Dec 14, 2010

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