BCR16CM-12LC_15 Datasheet, PDF(2/8 Page) Renesas Technology Corp

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BCR16CM-12LC_15 Datasheet, PDF (2/8 Pages) Renesas Technology Corp – 600V - 16A - Triac Medium Power Use

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BCR16CM-12LC

Preliminary

Electrical Characteristics

Parameter

Symbol

Rated value

Unit

Min. Typ. Max.

Test conditions

Repetitive peak off-state current

IDRM

On-state voltage

VTM

Gate trigger voltageNote2

VFGTï

ïï

VRGTï

Gate trigger curentNote2

ïïï VRGTïïï

IFGTï

ïï

IRGTï

ïïï

IRGTïïï

2.0

mA Tj = 125ï°C, VDRM applied

1.75

Tc = 25ï°C, ITM = 25A,

instantaneous measurement

1.5

Tj = 25ï°C, VD = 6 V, RL = 6 ï,

RG = 330 ï

1.5

mA Tj = 25ï°C, VD = 6 V, RL = 6 ï,

mA RG = 330 ï

Gate non-trigger voltage

Thermal resistance

VGD

0.2

Tj = 125ï°C, VD = 1/2 VDRM

Rth (j-c)

1.8

ï°C/W Junction to caseNote3, Note 4

Critical-rate of rise of off-state

(dv/dt)c 10

V/ïs Tj = 125ï°C

commutation voltageNote5

Notes: 1. Gate open.

2. Measurement using the gate trigger characteristics measurement circuit.

3. Case temperature I measured at the T2 tab 1.5mm away from the molded case.

4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0ï°C/W.

5. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.

Test conditions

1. Junction temperature

Tj = 125ï°C

2. Rate of decay of on-state commutating current

(di/dt)c = â8 A/ms

3. Peak off-state voltage

VD = 400 V

Commutating voltage and current waveforms

(inductive load)

Supply Voltage

Time

Main Current

Main Voltage

(dv/dt)c

(di/dt)c

Time

R07DS1031EJ0200 Rev.2.00

Feb 25, 2013

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