BCR16CM-12LB_15 Datasheet, PDF (2/9 Pages) Renesas Technology Corp – 600V - 16A - Triac Medium Power Use

BCR16CM-12LB
Preliminary
Electrical Characteristics
Parameter
Symbol Min. Typ. Max. Unit
Test conditions
Repetitive peak off-state current
I_DRM
—
On-state voltage
V_TM
—
Gate trigger voltage^Note2

V_FGT
—

V_RGT
—

V_{RGT}
—
Gate trigger current^Note2

I_FGT
—

I_RGT
—

I_{RGT}
—
—
2.0
mA Tj = 150C, V_DRM applied
—
1.5
V Tc = 25C, I_TM = 25 A,
Instantaneous measurement
—
1.5
V Tj = 25C, V_D = 6 V, R_L = 6 ,
—
1.5
V
R_G = 330 
—
1.5
V
—
30^Note6 mA Tj = 25C, V_D = 6 V, R_L = 6 ,
—
30^Note6
mA
R_G = 330 
—
30^Note6
mA
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage^Note5
V_GD
0.2/0.1
—
R_{th (j-c)}
—
—
(dv/dt)c 10/1
—
—
V
Tj = 125C/150C, V_D = 1/2 V_DRM
1.4
C/W Junction to case^{Note3 Note4}
—
V/s Tj = 125C/150C
Notes: 1. Gate open.
2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T₂ tab 1.5 mm away from the molded case.
4. The contact thermal resistance R_{th (c-f)} in case of greasing is 1.0°C/W.
5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
6. High sensitivity (I_GT  20 mA) is also available. (I_GT item: 1)
Test conditions
1. Junction temperature
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = – 8.0 A/ms
3. Peak off-state voltage
V_D = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
V_D
R07DS1032EJ0400 Rev.4.00
Feb 25, 2013
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