English
Language : 

BCR12LM-16LH_15 Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Triac Medium Power Use
BCR12LM-16LH
Parameter
RMS on-state current
Surge on-state current
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
Ratings
12
120
60
5
0.5
10
2
–40 to +150
–40 to +150
1.5
1800
Unit
A
A
A2s
W
W
V
A
°C
°C
g
V
Preliminary
Conditions
Commercial frequency, sine full wave
360°conduction, Tc = 93°C
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1 • T2 • G terminal to case
Electrical Characteristics
Parameter
Repetitive peak off-state current
Symbol
IDRM
BCR12LM-16LH-1
(IGT item : 1)
Min. Typ. Max.
— — 2.0
On-state voltage
VTM
—
— 1.5
Gate trigger voltageNote2
Gate trigger curentNote2
Ι
VFGTΙ
—
ΙΙ
VRGTΙ
—
ΙΙΙ VRGTΙΙΙ —
Ι
IFGTΙ
—
ΙΙ
IRGTΙ
—
ΙΙΙ IRGTΙΙΙ
—
— 1.5
— 1.5
— 1.5
— 35
— 35
— 35
BCR12LM-16LH
Unit Test conditions
Min. Typ. Max.
— — 2.0 mA Tj = 150°C
VDRM applied
—
— 1.5 V Tc = 25°C, ITM = 20 A
instantaneous
measurement
—
— 1.5 V Tj = 25°C, VD = 6 V
—
— 1.5 V RL = 6 Ω, RG = 330 Ω
— — 1.5 V
—
—
50 mA Tj = 25°C, VD = 6 V
—
—
50 mA RL = 6 Ω, RG = 330 Ω
— — 50 mA
Gate non-trigger voltage
VGD
0.2
—
—
0.2
—
—
V Tj = 125°C
VD = 1/2 VDRM
0.1 —
— 0.1 —
—
V Tj = 150°C
Thermal resistance
Rth (j-c)
—
— 4.0 —
VD = 1/2 VDRM
—
4.0 °C/W Junction to caseNote3
Critical-rate of decay of on-state (di/dt)c 7
commutating current Note4
—
—
13
—
— A/ms Tj = 125°C
(dv/dt)c < 100 V/μs
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of decay of on-state commutation current are shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Peak off-state voltage
VD = 400 V
2. Rate of rise of off-state commutating voltage
(dv/dt)c < 100 V/μs
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
R07DS0415EJ0100 Rev.1.00
May 19, 2011
Page 2 of 7