BCR12CM-12LB Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)

BCR12CM-12LB (The product guaranteed maximum junction temperature of 150°C)
Parameter
RMS on-state current
Surge on-state current
I²t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Notes: 1. Gate open.
Symbol
I_{T (RMS)}
I_TSM
I²t
P_GM
P_{G (AV)}
V_GM
I_GM
Tj
Tstg
—
Ratings
12
120
60
5
0.5
10
2
– 40 to +150
– 40 to +150
2.0
Unit
Conditions
A
Commercial frequency, sine full wave
360° conduction, Tc = 123°C^Note3
A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
A²s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
W
W
V
A
°C
°C
g
Typical value
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak off-state current
I_DRM
—
On-state voltage
V_TM
—
Gate trigger voltage^Note2
Ι
V_FGTΙ
—
ΙΙ
V_RGTΙ
—
ΙΙΙ
V_{RGTΙΙΙ}
—
Gate trigger current^Note2
Ι
I_FGTΙ
—
ΙΙ
I_RGTΙ
—
ΙΙΙ
I_{RGTΙΙΙ}
—
—
2.0
mA Tj = 150°C, V_DRM applied
—
1.6
V
Tc = 25°C, I_TM = 20 A,
Instantaneous measurement
—
1.5
V
Tj = 25°C, V_D = 6 V, R_L = 6 Ω,
—
1.5
V
R_G = 330 Ω
—
1.5
V
—
30^Note6
mA Tj = 25°C, V_D = 6 V, R_L = 6 Ω,
—
30^Note6
mA ^RG ^{= 330 Ω}
—
30^Note6
mA
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage^Note5
V_GD
0.2/0.1
—
R_{th (j-c)}
—
—
(dv/dt)c 10/1
—
—
V
Tj = 125°C / 150°C,
V_D = 1/2 V_DRM
1.8
°C/W Junction to case^{Note3 Note4}
—
V/µs Tj = 125°C/150°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T₂ tab 1.5 mm away from the molded case.
4. The contact thermal resistance R_{th (c-f)} in case of greasing is 1.0°C/W.
5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
6. High sensitivity (I_GT ≤ 20 mA) is also available. (I_GT item: 1)
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 6.0 A/ms
3. Peak off-state voltage
V_D = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
V_D
REJ03G0456-0300 Rev.3.00 Nov 30, 2007
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