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BCR10CM-16LH_15 Datasheet, PDF (2/9 Pages) Renesas Technology Corp – 800V - 10A - Triac Medium Power Use
BCR10CM-16LH
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
Symbol
IDRM
BCR10CM-16LH-1
(IGT item : 1)
Min. Typ. Max.
— — 2.0
On-state voltage
VTM
—
— 1.5
Gate trigger voltageNote2
Gate trigger curentNote2

VFGT
—

VRGT
—
 VRGT —

IFGT
—

IRGT
—
 IRGT
—
— 1.5
— 1.5
— 1.5
— 35
— 35
— 35
BCR10CM-16LH
Min. Typ. Max.
— — 2.0
— — 1.5
— — 1.5
— — 1.5
— — 1.5
— — 50
— — 50
— — 50
Unit Test conditions
mA Tj = 150C
VDRM applied
V Tc = 25C, ITM = 15 A
instantaneous
measurement
V Tj = 25C, VD = 6 V
V RL = 6 , RG = 330 
V
mA Tj = 25C, VD = 6 V
mA RL = 6 , RG = 330 
mA
Gate non-trigger voltage
VGD
0.2
—
—
0.2
—
—
V Tj = 125C
VD = 1/2 VDRM
0.1 —
— 0.1 —
—
V Tj = 150C
Thermal resistance
VD = 1/2 VDRM
Rth (j-c)
—
— 1.8
—
—
1.8 C/W Junction to caseNote3,4
Critical-rate of decay of on-state (di/dt)c 6
—
—
10
—
— A/ms Tj = 125C
commutating current Note5
(dv/dt)c < 100 V/s
Notes: 1. Gate open.
2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T2 tab 1.5 mm apart from the molded case.
4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0C/W.
5. Test conditions of the critical-rate of decay of on-state commutation current are shown in the table below.
Test conditions
1. Junction temperature
Tj = 125C
2. Peak off-state voltage
VD = 400 V
2. Rate of rise of off-state commutating voltage
(dv/dt)c < 100 V/s
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
R07DS0320EJ0200 Rev.2.00
Feb 25, 2013
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