BCR08ES-14A Datasheet, PDF (2/4 Pages) Renesas Technology Corp – 700V - 0.8A - Triac Low Power Use

BCR08ES-14A
Preliminary
Electrical Characteristics
Parameter
Symbol BCR08ES-14A#B10 BCR08ES-14A#B11 BCR08ES-14A#B12 Unit
Min. Max. Min. Max. Min. Max.
Test conditions
Repetitive peak
off-state current
On-state voltage
I_DRM
—
1.0
—
1.0
—
1.0 mA Tj = 125C
V_DRM applied
V_TM
—
2.0
—
2.0
—
2.0
V Tc = 25C, I_TM =1.2 A
instantaneous
measurement
Gate trigger
voltage^Note2
Gate trigger
current^Note2

V_FGT
—
2.0
—
2.0
—
2.0 V Tj = 25C, V_D = 6 V
 V_RGT
—
2.0
—
2.0
—
2.0
V RL = 6 , RG = 330 
 V_{RGT}
—
2.0
—
2.0
—
2.0 V
V_{FGT}
—
―
—
2.0
—
2.0 V

I_FGT
—
5
—
5
—
10 mA Tj = 25C, V_D = 6 V

I_RGT
—
5
—
5
—
10 mA RL = 6 , RG = 330 
 I_{RGT}
—
5
—
5
—
10 mA
I_{FGT}
—
―
—
7
—
10 mA
Gate non-trigger
V_GD
0.2
—
0.2
—
0.2
—
V Tj = 125C
voltage
V_D = 1/2 V_DRM
Thermal resistance
R_{th (j-a)}
—
65
—
65
—
65 C/W Junction to ambient^Note3
Critical-rate of rise of (dv/dt)c 0.5
—
0.5
—
0.5
— V/s Tj = 125C
off-state commutating
voltage ^Note4
Notes: 1. Gate open.
2. Measurement using the gate trigger characteristics measurement circuit.
3. Soldering with ceramic plate (25 mm  25 mm  t0.7 mm)
4. Test conditions of the critical-rate of rise of off-state commutating voltage are shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 0.4 A/ms
3. Peak off-state voltage
V_D = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
V_D
R07DS0971EJ0001 Rev.0.01
Nov 28, 2012
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