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BCR08DS-14A Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Triac Low Power Use Planar Passivation Type Surface Mounted Type | |||
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BCR08DS-14A
Preliminary
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak off-state current
IDRM
â
On-state voltage
VTM
â
Gate trigger voltageNote2
ï
VFGTï
â
ïï
VRGTï
â
ïïï
VRGTïïï
â
Gate trigger currentNote2
ï
IFGTï
â
ïï
IRGTï
â
ïïï
IRGTïïï
â
â
1.0
mA Tj = 125°C, VDRM applied
â
2.0
V
Tc = 25°C, ITM = 1.2 A,
Instantaneous measurement
â
2.0
V
Tj = 25°C, VD = 6 V, RL = 6 ï,
â
2.0
V
RG = 330 ï
â
2.0
V
â
5
mA Tj = 25°C, VD = 6 V, RL = 6 ï,
â
5
mA RG = 330 ï
â
5
mA
Gate non-trigger voltage
Thermal resistance
VGD
0.2
â
â
V
Tj = 125°C, VD = 1/2 VDRM
Rth (j-c)
â
â
25
°C/W Junction to caseNote3
Critical-rate of rise of off-state
(dv/dt)c
0.5
â
commutating voltageNote4
â
V/ïs Tj = 125°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured on the T2 tab..
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = â0.4 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
R07DS0258EJ0100 Rev.1.00
Mar 30, 2011
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