BCR08AS-12A_15 Datasheet, PDF(2/8 Page) Renesas Technology Corp

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BCR08AS-12A_15 Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Triac Low Power Use

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BCR08AS-12A

Preliminary

Electrical Characteristics

Parameter

Symbol Min.

Typ.

Max.

Unit

Test conditions

Repetitive peak off-state current

IDRM

2.0

mA Tj = 125ï°C, VDRM applied

On-state voltage

VTM

2.0

Tc = 25ï°C, ITM = 1.2 A,

Instantaneous measurement

Gate trigger voltageNote2

VFGTï

2.0

Tj = 25ï°C, VD = 6 V, RL = 6 ï,

ïï

VRGTï

2.0

RG = 330 ï

ïïï

VRGTïïï

2.0

ïV

VFGTïïï

2.0

Gate trigger currentNote2

IFGTï

mA Tj = 25ï°C, VD = 6 V, RL = 6 ï,

ïï

IRGTï

mA RG = 330 ï

ïïï

IRGTïïï

ïV

IFGTïïï

Gate non-trigger voltage

Thermal resistance

VGD

0.1

Tj = 125ï°C, VD = 1/2 VDRM

Rth (j-a)

ï°C/W Junction to ambientNote3

Critical-rate of rise of off-state

(dv/dt)c

0.5

V/ïs Tj = 125ï°C

commutating voltageNote4

Notes: 2. Measurement using the gate trigger characteristics measurement circuit.

3. Soldering with ceramic plate (25 mm ï´ 25 mm ï´ t0.7 mm).

4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.

Test conditions

1. Junction temperature

Tj = 125ï°C

2. Rate of decay of on-state commutating current

(di/dt)c = â 0.4 A/ms

3. Peak off-state voltage

VD = 400 V

Commutating voltage and current waveforms

(inductive load)

Supply Voltage

Time

Main Current

Main Voltage

(dv/dt)c

(di/dt)c

Time

R07DS0134EJ0500 Rev.5.00

Sep 15, 2010

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