BCR08AS-12 Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Triac Low Power Use

BCR08AS-12
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak off-state current
I_DRM
—
—
2.0
mA Tj = 125°C, V_DRM applied
On-state voltage
V_TM
—
—
2.0
V
Tc = 25°C, I_TM = 1.2 A,
Instantaneous measurement
Gate trigger voltage^Note2
Ι
V_FGTΙ
—
—
2.0
V
Tj = 25°C, V_D = 6 V, R_L = 6 Ω,
ΙΙ
V_RGTΙ
—
—
2.0
V
R_G = 330 Ω
ΙΙΙ
V_{RGTΙΙΙ}
—
—
2.0
V
ΙV
V_{FGTΙΙΙ}
—
—
2.0
V
Gate trigger current^Note2
Ι
I_FGTΙ
—
—
5
mA Tj = 25°C, V_D = 6 V, R_L = 6 Ω,
ΙΙ
I_RGTΙ
—
—
5
mA ^RG ^{= 330 Ω}
ΙΙΙ
I_{RGTΙΙΙ}
—
—
5
mA
ΙV
I_{FGTΙΙΙ}
—
—
10
mA
Gate non-trigger voltage
Thermal resistance
V_GD
0.1
—
—
V
Tj = 125°C, V_D = 1/2 V_DRM
R_{th (j-a)}
—
—
65
°C/W Junction to ambient^Note3
Critical-rate of rise of off-state
(dv/dt)c
0.5
—
—
V/µs Tj = 125°C
commutating voltage^Note4
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Soldering with ceramic plate (25 mm × 25 mm × t0.7 mm).
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 0.4 A/ms
3. Peak off-state voltage
V_D = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
V_D
REJ03G0292-0200 Rev.2.00 Mar 22, 2007
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