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BCR08AM-14A_15 Datasheet, PDF (2/7 Pages) Renesas Technology Corp – 700V-0.8A-Triac Low Power Use | |||
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BCR08AM-14A
Preliminary
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak off-state current
IDRM
â
â
1.0
mA Tj = 125°C, VDRM applied
On-state voltage
VTM
â
â
2.0
V
Tc = 25°C, ITM = 1.2 A,
Instantaneous measurement
Gate trigger voltageNote2
Î
VFGTÎ
â
ÎÎ
VRGTÎ
â
â
2.0
â
2.0
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
V
RG = 330 Ω
ÎÎÎ
VRGTÎÎÎ
â
Gate trigger currentNote2
Î
IFGTÎ
â
ÎÎ
IRGTÎ
â
â
2.0
V
â
5
mA Tj = 25°C, VD = 6 V, RL = 6 Ω,
â
5
mA RG = 330 Ω
ÎÎÎ
IRGTÎÎÎ
â
â
5
mA
Gate non-trigger voltage
Thermal resistance
VGD
0.1
â
â
V
Tj = 125°C, VD = 1/2 VDRM
Rth (j-c)
â
â
50
°C/W Junction to caseNote3
Critical-rate of rise of off-state
(dv/dt)c
0.5
â
commutating voltageNote4
â
V/μs Tj = 125°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = â 0.4 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply
Voltage
Time
Main
Current
Main
Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
R07DS1226EJ0300 Rev.3.00
Jul 31, 2014
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