BB503M Datasheet, PDF (2/11 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB503M
Absolute Maximum Ratings
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V_DS
V_G1S
V_G2S
I_D
Pch
Tch
Tstg
Ratings
6
+6
–0
+6
–0
20
150
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate1 to source breakdown voltage
Gate2 to source breakdown voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Gate2 to source cutoff voltage
Drain current
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
(Ta = 25°C)
Symbol Min Typ Max Unit
Test conditions
V_(BR)DSS
6
—
—
V
I_D = 200 µA, V_G1S = V_G2S = 0
V_(BR)G1SS
+6
—
—
V
I_G1 = +10 µA, V_G2S = V_DS = 0
V_(BR)G2SS
+6
—
—
V
I_G2 = +10 µA, V_G1S = V_DS = 0
I_G1SS
—
—
+100
nA V_G1S = +5 V, V_G2S = V_DS = 0
I_G2SS
—
—
+100
nA V_G2S = +5 V, V_G1S = V_DS = 0
V_G1S(off)
0.5
0.7
1.0
V
V_DS = 5 V, V_G2S = 4 V
I_D = 100 µA
V_G2S(off)
0.5
0.7
1.0
V
V_DS = 5 V, V_G1S = 5 V
I_D = 100 µA
I_D(op)
7
10
13
mA V_DS = 5 V, V_G1 = 5 V
V_G2S = 4 V, R_G = 47 kΩ
|y_fs|
19
24
29
mS V_DS = 5 V, V_G1 = 5 V, V_G2S = 4 V
R_G = 47 kΩ, f = 1 kHz
c_iss
1.4
1.7
2.0
pF V_DS = 5 V, V_G1 = 5 V
c_oss
0.7
1.1
1.5
pF VG2S =4 V, RG = 47 kΩ
c_rss
— 0.025 0.05 pF ^{f = 1 MHz}
PG
17
22
—
dB V_DS = 5 V, V_G1 = 5 V
NF
—
1.8
2.4
dB ^VG2S ^{= 4 V, R}G ^{= 47 kΩ}
f = 900 MHz
Rev.5.00 Aug 10, 2005 page 2 of 10