2SK3150 Datasheet, PDF (2/9 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3150(L), 2SK3150(S)
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
V_DSS
V_GSS
I_D
I_{D(pulse)Note1}
I_DR
I_AP ^Note3
E_AR ^Note3
Pch ^Note2
Tch
Tstg
Ratings
100
±20
20
80
20
20
40
50
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max Unit
Test Conditions
Drain to source breakdown voltage V_(BR)DSS 100
—
—
V I_D = 10 mA, V_GS = 0
Gate to source breakdown voltage V_(BR)GSS ±20
—
—
V I_G = ±100 µA, V_DS = 0
Gate to source leak current
I_GSS
—
—
±10
µA V_GS = ±16 V, V_DS = 0
Zero gate voltage drain current
I_DSS
—
—
10
µA V_DS = 100 V, V_GS = 0
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
V_GS(off)
1.0
—
2.5
V I_D = 1 mA, V_DS = 10 V
R_DS(on)
—
45
60
mΩ I_D = 10 A, V_GS = 10 V^Note4
R_DS(on)
—
65
85
mΩ I_D = 10 A, V_GS = 4 V ^Note4
|y_fs|
8.5
14
—
S I_D = 10 A, V_DS = 10 V ^Note4
Input capacitance
Ciss
—
900
—
pF V_DS = 10 V, V_GS = 0,
Output capacitance
Coss
—
400
—
pF ^{f = 1 MHz}
Reverse transfer capacitance
Crss
—
210
—
pF
Turn-on delay time
t_d(on)
—
15
—
Rise time
t_r
—
120
—
Turn-off delay time
t_d(off)
—
200
—
Fall time
t_f
—
150
—
Body–drain diode forward voltage
V_DF
—
0.9
—
Body–drain diode reverse recovery
t_rr
time
—
90
—
Note: 4. Pulse test
ns I_D = 10 A, V_GS = 10 V,
ns ^RL ^{= 3 Ω}
ns
ns
V I_F = 20 A, V_GS = 0
ns I_F = 20 A, V_GS = 0
di_F/ dt = 50 A/µs
Rev.4.00 Sep 07, 2005 page 2 of 8